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| RFP2N20 Data Sheet July 1999 File Number 2881.2 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09289. Features * 2A, 200V * rDS(ON) = 3.500 Symbol D G Ordering Information PART NUMBER RFP2N20 PACKAGE TO-220AB BRAND RFP2N20 S NOTE: When ordering, include the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-518 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFP2N20 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP2N20 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 200 200 2 5 20 25 0.2 -55 to 150 300 260 UNITS V V A A V W W/ oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0 VGS = VDS, ID = 250A, (Figure 8) VDS = Rated BVDSS VDS = 0.8 x Rated BVDSS, TC = 125oC Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 0V, VDS = 25V f = 1MHz, (Figure 9) VGS = 20V, VDS = 0 ID = 2A, VGS = 10V, (Figures 6, 7) ID = 2A, VGS = 10V ID 1A, VDD = 100V, RG = 50 VGS = 10V, RL = 96.5 (Figure 10) MIN 200 2 TYP 15 20 25 15 MAX 4 1 25 100 3.500 7.0 25 30 40 25 200 60 25 5 V A A nA V ns ns ns ns pF pF pF oC/W Electrical Specifications PARAMETER UNITS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulsed test: width 300s duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = 1A ISD = 2A, dlSD/dt = 50A/s TEST CONDITIONS MIN TYP 200 MAX 1.4 UNITS V ns 4-519 RFP2N20 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER Unless Otherwise Specified 2.5 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 ID, DRAIN CURRENT (A) 2.0 1.5 1.0 0.5 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 TJ = MAX RATED SINGLE PULSE TC = 25oC ID, DRAIN CURRENT (A) 3 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 2.5 T = 25oC C 2 1.5 1 0.5 VGS = 4V VGS = 20V VGS = 10V ID, DRAIN CURRENT (A) 1 VGS = 8V VGS = 7V VGS = 6V VGS = 5V OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 0.10 0.01 1 10 100 1000 0 0 1 2 3 4 5 6 VDS, DRAIN TO SOURCE VOLTAGE (V) 7 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 3 2.5 2 1.5 1 25oC 0.5 0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 125oC -40oC 0 0 0.5 1 1.5 ID, DRAIN CURRENT (A) 2 2.5 rDS(ON), DRAIN TO SOURCE ON RESISTANCE () PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS = 15V 25oC -40oC 125oC 6 5 4 3 2 1 25oC -40oC PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V 125oC FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 4-520 RFP2N20 Typical Performance Curves 2 NORMALIZED DRAIN TO SOURCE ON RESISTANCE ID = 2A, VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX NORMALIZED GATE THRESHOLD VOLTAGE Unless Otherwise Specified (Continued) 1.4 VGS = VDS ID = 250A 1.5 1.2 1 1.0 0.5 0.8 0 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) 150 0 50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 180 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 200 VDD = BVDSS 150 GATE SOURCE VOLTAGE 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS RL = 100 IG(REF) = 0.09A VGS = 10V DRAIN SOURCE VOLTAGE 0 I 20 G(REF) IG(ACT) I 80 G(REF) IG(ACT) VDD = BVDSS 8 10 VGS, GATE TO SOURCE VOLTAGE (V) 140 C, CAPACITANCE (pF) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 100 6 100 60 COSS CRSS 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 4 50 20 2 0 t, TIME (s) NOTE: Refer to Intersil Applications Notes AN7254 and AN7260 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 4-521 RFP2N20 Test Circuits and Waveforms VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT 0.3F Qgs D VDS G DUT 0 Qg(TOT) Qgd VGS CURRENT REGULATOR 12V BATTERY 0.2F 50k IG(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 4-522 |
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